1.9 0.95 0.95 2.9 0.4 1.3 2.4 1.0 jiang su changjiang electronics technology co.,ltd sot - 23 plastic - encapsulate transistors ss 8550lt1 transistor ? pn p ? features power dissipation p cm : 0. 3 w ? t amb=25 ??? collector current i cm : - 1.5 a c ollector - base voltage v (br) cbo : - 40 v oper ating and storage junction temperature range t j ? t stg : - 55 ?? to +150 ?? electrical characteristics ? t amb =25 ?? unless otherwise specified ? p arameter symbol test conditions min max unit collector - base breakdown voltage v (br) cbo i c = - 100 | a ? i e =0 - 40 v collector - emitter b reakdown voltage v (br) c e o i c = - 0.1m a ? i b =0 - 25 v emitter - base breakdown voltage v (br)eb o i e = - 1 00 | a ? i c =0 - 5 v collector cut - off current i cbo v cb = - 40 v , i e =0 - 0.1 | a collector cut - off current i ceo v ce = - 2 0 v , i b =0 - 0.1 | a emitter cut - off current i ebo v eb = - 5 v , i c =0 - 0.1 | a h fe ? 1 ? v ce = - 1 v, i c = - 1 0 0m a 120 350 dc current gain h fe ? 2 ? v ce = - 1 v, i c = - 8 0 0m a 40 collector - emitter saturation voltage v ce (sat) i c = - 800 ma , i b = - 80m a - 0.5 v b ase - emitter saturation voltage v be (sat) i c = - 800 m a, i b = - 80m a - 1.2 v transition frequency f t v ce = - 10v, i c = - 50ma f= 30mhz 100 mhz classification of h fe (1) rank l h range 120 - 200 200 - 350 device marking ss 8550lt1=y2 unit : mm sot ?a 23 1. base 2. emitter 3 . c ollector
sot -23 p ackage outline dimensions symbol a a1 a2 b c d e e1 e e1 l l1 | min 0.900 0.000 0.900 0.300 0.080 2.800 1.200 2.250 1.800 0.300 0 max 1.100 0.100 1.000 0.500 0.150 3.000 1.400 2.550 2.000 0.500 8 min 0.035 0.000 0.035 0.012 0.003 0.110 0.047 0.089 0.071 0.012 0 max 0.043 0.004 0.039 0.020 0.006 0.118 0.055 0.100 0.079 0.020 8 dimensions in millimeters dimensions in inches 0.037tpy 0.022ref 0.950tpy 0.550ref d e1 a1 a2 a e l1 l b e1 c 0.2 e |
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